Name:
Date:
Midterm 1 10/13/2020
1) A 0.18µm CMOS process has the following transistor characteristics: NMOS tox = 4.1×10-9 m, VTN0 = 0.35V, µn0 = 327 cm2/V-s PMOS tox = 4.1×10-9 m, VTP0 = -0.41V, µp0 = 128 cm2/V-s (a) Plot the IDS vs. VDS curves for NMOS (W=0.3µm, L=0.18µm), VGS=0, 0.9V, and 1.8V
PMOS (W=0.3µm, L=0.18µm), VGS=0, -0.9V, and -1.8V
(b) When you use SPICE simulation to get the same curves for the NMOS transistor, you find out that the simulated values for the same transistor sizes, voltages, etc. are
lower in saturation than your hand calculations predicted.
State two (2) non-ideal effects which may account for this lower current:
i)
ii)
1.8V0.9V0.45V 01.35V-1.8V -0.9V -0.45V-01.35V VDS
IDS
BARMAK MANSoo#CAN
11/1/20
500nA# 483mA
. .
. – – – – –
– – – – – – –
;–# =
– – – – – – – – – – – a
7414mA . ‘ Iy.it- , I’ f- , y Nmospros 21 qua , i µVos=&9V us -0 moves .
– of in a y’
“÷.÷÷÷.÷÷÷”÷÷÷÷” ”
“”
Thos –
vase – I .8V
:
VELOCITY SATURATION
MOBILITY DEGRADATION
Name:
Date:
Intentionally left blank for your work:
BARMAK MANSOORIAN
go
? CALCULATE An Bp D= oh ?¥
,
Ana 32744.see * 8.4×10-7%42 * &p?Yg£-m ? emanate cconmf.mg?,xtsEg..saIE.mFEInNM
” ‘ Pms) = 4=46×0-“Fae#a 8.4×0-7 Fkn’ Bp = 128¥. see * 8.4×10-7%4* 06.71¥4. 1×10 on
Bpa 1.8×10 – “F- V. SEC
? CALCULATE MAI CURRENT Of Nmos TRANSISTOR AS SANITY CHECK ..
IDNMOS Max = Ben * I ( 1.EV- 0.3 ” I
4
= 4.6×10 – F- * 1. OTVZ *SEC
= 4.8×10-4 F¥c= 4-8×0 – ” A = 480mA (SEEMS A Boot
RCIGHT)
? CALCULATE MAX CURRENT OF Pmo, TRANSISTOR AS
CHECK .
I
ID.pro, Max = Bp * I ( – 1.or – C
– g.a)2)
= 1.8×154%7*0.966 V2 = 173µA (SEEMS ABOUT
RIGHT)
? NOW CALCULATE VDSAT ‘s (TRANS , now points BETWEEN SATURATION
AND UNEAR)
Vas = @ ? Vos 20.35V, so TRANS’S
‘M OFF pmo, veg =p ? us ,> I
– ol.eu/ ,
so TRANS’S TOR OFF
NMOS go TRANSISTOR ON
Vos .io/.sVlVos3I-ol.av/ , Vos = 4.SV Vcs
> 0.35N, So TRANSISTOR ON
=
-0.su- C – 0.9)
” in:÷%:? ” “in:* -ourVGS > 1. JV frost> I – O.eu/ , so TRANSISTOR ONVGS > 1. EV Vos > 4. ITV , So TRANSISTOR ON
VDSAT II. 8V – C- 0.9) VDSAt =/.8V- 0.35
V
= 1.YTV Vpsat = – 1.39W
VDSAT
? CALCULATE SAT CURRENTS AND ONE URRENT
VALUE BEFORE EACH VDSAT . Aco 6 w/ ¢ , TH’S
WILL GIVE You 3 POINTS FOR EACEH VGS
PM OS Vos -01 ? TRANSISTOR OFF IDs -01 For
NM og veg reef ? TRANSISTOR OFF IDS -_0 FOR ALL VDS
ALL VDS – –
Ves . – 0.9V Vcs = 0.9 V
for ?s< Vps L -0.491 '''E ? ABOVE) For Vps> VDSAT> 0.554£ ? ABOVE)
? Ips — IDsat = Bp t f – 0.49 )
”
2 21.6 Ips — IDsat = Ph t ( 0.9 – 0.35¥ -y F – ¢.gg/IDSAT–mA=4.6xio-4#.c*Iz(0.55HIDSAT–69mA = 1.8×10 ? * { ( FOR VDSLVDSAT PICK A Vbs VALVE .
I’LL PICK VDS ? 01222 FOR VDSLVDSAT PICK A Vbs VALVE . I’LL PICK VDS ? 01225g
IDs = IDsan = An [ ( 0.910.35k KYIV) ( 0.22N)) IDs = IDsan = Bp [ ( – 0.49 – (-0.225-9)/-0.2254)
= 1.8×10 ‘
* 5.96×107! 10nA
= 4.6×10 ‘
* 0.098 V –
= 45mA
IDSLCN (VDSAT -50.225K)= 10mA IDSLCN (VDSAT -_ 0.225D= 45mA –
– ¥Vcs =Vcs =L-OV for ?Ds Lrp, L – 1.3N (Sf:÷÷E ? ABOVE)FOR Vps> VDSAT> 1.4N (S¥i÷÷E ? ABOVE) IDs — IDsat = Bp Iz f – 1.39 V )’Ips — IDsat = Ph t (l- YTV )” -4uF¥ * { f- 1. 3g y’ IDSAT– 173mA= 4.6×10-4 * { 4954′ IDSAT– 483mA = i.8×10 ,VDS VALVE . I’LL PICK VDS ? 019 V FOR VDS > VDSAT PICK A Vbs VALVE . I’LL PICK VDS ? 019 VFOR VDSLVDSAT PICK A ¢, I = Ipsc,n= puff – 1.39 V -f 4)(? 9 V))IDs = IDsan = An [ ( 1.4N – -2410.9 V)) – Y F= 1.8×10 -* 0.846 V2 = 4.6×10
–
* 0.9J v. SEE V. SEC Ipa,w ( VDs= 0.94=152MA
IDSUN ( VDS -_ 0.9V) = 419mA
Name:
Date:
2) Calculate the LOWEST CLOCK frequency for which this latch would retain a LOGIC ONE. Assume the following:
a) VTN = 0.35 Volt (neglect body effect for this problem) b) Total Leakage current on STORAGE NODE = 100 x 10-15 Amps (assume all leakage
current is to ground).
c) Minimum Valid Voltage for LOGIC ONE = 1.3 Volts d) Maximum Voltage for LOGIC ONE = 1.8 Volts e) Gate Capacitance (for 0.18um long device) = 1.67 fF/µm f) Diffusion Capacitance = 1.12 fF/µm
LOWEST CLOCK Frequency = _____________________
CLOCK
INPUT M1
W/L = 2µm/0.18µm
M2 W/L =
1µm/0.18µm
M3 W/L =
2µm/0.18µm
STORAGE NODE 1.8 V
BARMAK MANSooriAN
11/1/20
92 Hz
Name:
Date:
Intentionally left blank for your work:
TSARMAK MANSOOR can
114/50
? STEP I CALCULATE THE HIGHEST VOLTAGE THAT CAN END UP ON –
STORAGE NODE ? clock = C.gr/NpUT–l.8V l- N
“THE@STORAGE NODE = 1. gu – of.zTv= 1.45W I -85£ t.TV
? CALCULATE CAPACITANCE @ STORAGE NODE STORAGENODE
§ STORKE IN#Ac f ICoate Paros
NODE and =
1.4N -1¥¥hk__hq? ‘Footy:&. § Jeane f- coated”g CAFF = 1.1214%4*44–2.24 FF (
Mca?’EEYIfIee)
Coatepmos = 1.67# * 2mm = 3. Seeff ( M ‘ cfFIEI-awc.es)
mm
CGATENMOS = 1.67 #m * gun = 1.67ft ( M2eap?ATE )
CTOTAC @ STORAGE NODE = 7-25
tf
? CALCULATE RATE OF CHANGE OF VOLTAGE ON
STORACE NODE :
re Q=CV ?= I — Cdf Iata’7a -1725ft
= =cook
I
7-25 x co -‘5 F
= 13.8 %EC
? How MANY VOLTS MOST STORAGE NODE Discharge TO CAUSE
” BAD ” ONE ?
MAX VOLTAGE= 1.95 V
MIN ” l ” vaeueec.gr } Ar= 150mV
? DV F- II. 13.0¥
150mV
At-_BI –
13.TV/sec=l3.8YstcDt–1.1×10-2 SEC ? LOWEST CLOCK FREQUENCY
Fan = c-= 92Az At
Name:
Date:
3) Implement the following Logic Function in Static CMOS using the minimum number of transistors:
Y = (A + B) & (C + D)
BARMAK MANSOOR CAN
11/1/20
A -01474 B-off Daddy ¥7OUT –
C -14 ¥ ? ( CTD) I ? 4 –
A -14%4 ?Cate ) ±
Name:
Date:
Intentionally left blank for your work:
TSARMAK MAN SooRi AN
11/1/20
Name:
Date:
4) Draw a process cross section from A to A as marked in the following layout (identify the layers in your drawing i.e. p-diffusion, n-diffusion, poly, metal1, contact, etc.:
BARMAK MANSONAN
offs
METAL’ METALL
Jv pool µ pool
a .
. U L¥
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Midterm1WithSolutions.pdf
Home>Engineering homework help>Electrical Engineering homework help>LTSPICE
Name:
Date:
Midterm 1 10/13/2020
1) A 0.18µm CMOS process has the following transistor characteristics: NMOS tox = 4.1×10-9 m, VTN0 = 0.35V, µn0 = 327 cm2/V-s PMOS tox = 4.1×10-9 m, VTP0 = -0.41V, µp0 = 128 cm2/V-s (a) Plot the IDS vs. VDS curves for NMOS (W=0.3µm, L=0.18µm), VGS=0, 0.9V, and 1.8V
PMOS (W=0.3µm, L=0.18µm), VGS=0, -0.9V, and -1.8V
(b) When you use SPICE simulation to get the same curves for the NMOS transistor, you find out that the simulated values for the same transistor sizes, voltages, etc. are
lower in saturation than your hand calculations predicted.
State two (2) non-ideal effects which may account for this lower current:
i)
ii)
1.8V0.9V0.45V 01.35V-1.8V -0.9V -0.45V-01.35V VDS
IDS
BARMAK MANSoo#CAN
11/1/20
500nA# 483mA
. .
. – – – – –
– – – – – – –
;–# =
– – – – – – – – – – – a
7414mA . ‘ Iy.it- , I’ f- , y Nmospros 21 qua , i µVos=&9V us -0 moves .
– of in a y’
“÷.÷÷÷.÷÷÷”÷÷÷÷” ”
“”
Thos –
vase – I .8V
:
VELOCITY SATURATION
MOBILITY DEGRADATION
Name:
Date:
Intentionally left blank for your work:
BARMAK MANSOORIAN
go
? CALCULATE An Bp D= oh ?¥
,
Ana 32744.see * 8.4×10-7%42 * &p?Yg£-m ? emanate cconmf.mg?,xtsEg..saIE.mFEInNM
” ‘ Pms) = 4=46×0-“Fae#a 8.4×0-7 Fkn’ Bp = 128¥. see * 8.4×10-7%4* 06.71¥4. 1×10 on
Bpa 1.8×10 – “F- V. SEC
? CALCULATE MAI CURRENT Of Nmos TRANSISTOR AS SANITY CHECK ..
IDNMOS Max = Ben * I ( 1.EV- 0.3 ” I
4
= 4.6×10 – F- * 1. OTVZ *SEC
= 4.8×10-4 F¥c= 4-8×0 – ” A = 480mA (SEEMS A Boot
RCIGHT)
? CALCULATE MAX CURRENT OF Pmo, TRANSISTOR AS
CHECK .
I
ID.pro, Max = Bp * I ( – 1.or – C
– g.a)2)
= 1.8×154%7*0.966 V2 = 173µA (SEEMS ABOUT
RIGHT)
? NOW CALCULATE VDSAT ‘s (TRANS , now points BETWEEN SATURATION
AND UNEAR)
Vas = @ ? Vos 20.35V, so TRANS’S
‘M OFF pmo, veg =p ? us ,> I
– ol.eu/ ,
so TRANS’S TOR OFF
NMOS go TRANSISTOR ON
Vos .io/.sVlVos3I-ol.av/ , Vos = 4.SV Vcs
> 0.35N, So TRANSISTOR ON
=
-0.su- C – 0.9)
” in:÷%:? ” “in:* -ourVGS > 1. JV frost> I – O.eu/ , so TRANSISTOR ONVGS > 1. EV Vos > 4. ITV , So TRANSISTOR ON
VDSAT II. 8V – C- 0.9) VDSAt =/.8V- 0.35
V
= 1.YTV Vpsat = – 1.39W
VDSAT
? CALCULATE SAT CURRENTS AND ONE URRENT
VALUE BEFORE EACH VDSAT . Aco 6 w/ ¢ , TH’S
WILL GIVE You 3 POINTS FOR EACEH VGS
PM OS Vos -01 ? TRANSISTOR OFF IDs -01 For
NM og veg reef ? TRANSISTOR OFF IDS -_0 FOR ALL VDS
ALL VDS – –
Ves . – 0.9V Vcs = 0.9 V
for ?s< Vps L -0.491 '''E ? ABOVE) For Vps> VDSAT> 0.554£ ? ABOVE)
? Ips — IDsat = Bp t f – 0.49 )
”
2 21.6 Ips — IDsat = Ph t ( 0.9 – 0.35¥ -y F – ¢.gg/IDSAT–mA=4.6xio-4#.c*Iz(0.55HIDSAT–69mA = 1.8×10 ? * { ( FOR VDSLVDSAT PICK A Vbs VALVE .
I’LL PICK VDS ? 01222 FOR VDSLVDSAT PICK A Vbs VALVE . I’LL PICK VDS ? 01225g
IDs = IDsan = An [ ( 0.910.35k KYIV) ( 0.22N)) IDs = IDsan = Bp [ ( – 0.49 – (-0.225-9)/-0.2254)
= 1.8×10 ‘
* 5.96×107! 10nA
= 4.6×10 ‘
* 0.098 V –
= 45mA
IDSLCN (VDSAT -50.225K)= 10mA IDSLCN (VDSAT -_ 0.225D= 45mA –
– ¥Vcs =Vcs =L-OV for ?Ds Lrp, L – 1.3N (Sf:÷÷E ? ABOVE)FOR Vps> VDSAT> 1.4N (S¥i÷÷E ? ABOVE) IDs — IDsat = Bp Iz f – 1.39 V )’Ips — IDsat = Ph t (l- YTV )” -4uF¥ * { f- 1. 3g y’ IDSAT– 173mA= 4.6×10-4 * { 4954′ IDSAT– 483mA = i.8×10 ,VDS VALVE . I’LL PICK VDS ? 019 V FOR VDS > VDSAT PICK A Vbs VALVE . I’LL PICK VDS ? 019 VFOR VDSLVDSAT PICK A ¢, I = Ipsc,n= puff – 1.39 V -f 4)(? 9 V))IDs = IDsan = An [ ( 1.4N – -2410.9 V)) – Y F= 1.8×10 -* 0.846 V2 = 4.6×10
–
* 0.9J v. SEE V. SEC Ipa,w ( VDs= 0.94=152MA
IDSUN ( VDS -_ 0.9V) = 419mA
Name:
Date:
2) Calculate the LOWEST CLOCK frequency for which this latch would retain a LOGIC ONE. Assume the following:
a) VTN = 0.35 Volt (neglect body effect for this problem) b) Total Leakage current on STORAGE NODE = 100 x 10-15 Amps (assume all leakage
current is to ground).
c) Minimum Valid Voltage for LOGIC ONE = 1.3 Volts d) Maximum Voltage for LOGIC ONE = 1.8 Volts e) Gate Capacitance (for 0.18um long device) = 1.67 fF/µm f) Diffusion Capacitance = 1.12 fF/µm
LOWEST CLOCK Frequency = _____________________
CLOCK
INPUT M1
W/L = 2µm/0.18µm
M2 W/L =
1µm/0.18µm
M3 W/L =
2µm/0.18µm
STORAGE NODE 1.8 V
BARMAK MANSooriAN
11/1/20
92 Hz
Name:
Date:
Intentionally left blank for your work:
TSARMAK MANSOOR can
114/50
? STEP I CALCULATE THE HIGHEST VOLTAGE THAT CAN END UP ON –
STORAGE NODE ? clock = C.gr/NpUT–l.8V l- N
“THE@STORAGE NODE = 1. gu – of.zTv= 1.45W I -85£ t.TV
? CALCULATE CAPACITANCE @ STORAGE NODE STORAGENODE
§ STORKE IN#Ac f ICoate Paros
NODE and =
1.4N -1¥¥hk__hq? ‘Footy:&. § Jeane f- coated”g CAFF = 1.1214%4*44–2.24 FF (
Mca?’EEYIfIee)
Coatepmos = 1.67# * 2mm = 3. Seeff ( M ‘ cfFIEI-awc.es)
mm
CGATENMOS = 1.67 #m * gun = 1.67ft ( M2eap?ATE )
CTOTAC @ STORAGE NODE = 7-25
tf
? CALCULATE RATE OF CHANGE OF VOLTAGE ON
STORACE NODE :
re Q=CV ?= I — Cdf Iata’7a -1725ft
= =cook
I
7-25 x co -‘5 F
= 13.8 %EC
? How MANY VOLTS MOST STORAGE NODE Discharge TO CAUSE
” BAD ” ONE ?
MAX VOLTAGE= 1.95 V
MIN ” l ” vaeueec.gr } Ar= 150mV
? DV F- II. 13.0¥
150mV
At-_BI –
13.TV/sec=l3.8YstcDt–1.1×10-2 SEC ? LOWEST CLOCK FREQUENCY
Fan = c-= 92Az At
Name:
Date:
3) Implement the following Logic Function in Static CMOS using the minimum number of transistors:
Y = (A + B) & (C + D)
BARMAK MANSOOR CAN
11/1/20
A -01474 B-off Daddy ¥7OUT –
C -14 ¥ ? ( CTD) I ? 4 –
A -14%4 ?Cate ) ±
Name:
Date:
Intentionally left blank for your work:
TSARMAK MAN SooRi AN
11/1/20
Name:
Date:
4) Draw a process cross section from A to A as marked in the following layout (identify the layers in your drawing i.e. p-diffusion, n-diffusion, poly, metal1, contact, etc.:
BARMAK MANSONAN
offs
METAL’ METALL
Jv pool µ pool
a .
. U L¥
Applied Sciences
Architecture and Design
Biology
Business & Finance
Chemistry
Computer Science
Geography
Geology
Education
Engineering
English
Environmental science
Spanish
Government
History
Human Resource Management
Information Systems
Law
Literature
Mathematics
Nursing
Physics
Political Science
Psychology
Reading
Science
Social Science
Home
Homework Answers
Blog
Archive
Tags
Reviews
Contact
google+twitterfacebook
Copyright © 2021 SweetStudy.com
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